Usage of suspensions based on fumed silica for mechano-chemical polishing of single-crystalline silicon
Анотація
This article describes a preparation technique of polishing suspensions based on pyrogenic silicon dioxide nanoparticles, determines their basic technical characteristics, and also the guidelines on their usage are given in the mechano-chemical polishing process of semiconductor wafers of single-crystalline silicon.
Посилання
Joseph M.S., Shyam P.M., Ronald J.G. Chemical mechanical planarization of microelectronic materials // Wiley. – 1997. – 324 p.
US Patent № 6248144. Process for producing polishing composition. – Tamai, et al. (Fujimi Inc.), 19.06.2001.
US Patent № 6656241. Silica-based slurry. – Y.Li et.al. (PPG Industries Ohio, Inc.), 2.12.2003.
US Patent № 6533832. Chemical mechanical polishing slurry and method for using same.– J. Scott et.al. (Cabot Microelectronics Corporation), 18.03.2003.
Wijekoon K., Lin R. Tungster CMP process development // Solid State Technology. – 1998. – V. 2. – P. 53 – 56.
Айлер Р. Химия кремнезема / Под ред. В.П. Прянишникова.– М.: Мир, 1982. – Ч. 2. – 1128 с.
Патент РФ на изобретение № 2280056. Состав полирующей суспензии. – В.Е. Гайшун, О.И. Тюленкова, И.М. Мельниченко, Я.А. Косенок, 20.07.2006 г.
Патент РБ № 8586 на изобретение. Способ получения полирующей суспензии. – В.Е. Гайшун, О.И. Тюленкова, И.М. Мельниченко, 30.10.2006г, заяв. BY 20010354 опубл. 16.04.2001.
